Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-06-21
2005-06-21
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C356S237200, C356S369000
Reexamination Certificate
active
06908773
ABSTRACT:
Attenuated total reflectance (ATR)-Fourier transform infrared (FTIR) metal surface cleanliness monitoring is disclosed. A metal surface of a semiconductor die is impinged with an infrared (IR) beam, such as can be accomplished by using an ATR technique. The IR beam as reflected by the metal surface is measured. For instance, an interferogram of the reflected IR beam may be measured. A Fourier transform of the interferogram may also be performed, in accordance with an FTIR technique. To determine whether the metal surface is contaminated, the IR beam as reflected is compared to a reference sample. For example, the Fourier transform of the interferogram may be compared to the reference sample. If there is deviation by more than a threshold, the metal surface may be concluded as being contaminated.
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Jang Syun-Ming
Ko Chung-Chi
Li Lain-Jong
Coleman W. David
Nguyen Khiem
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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