Atomic oxygen-resistant film

Details Atomic oxygen-resistant film Atomic oxygen-resistant film

2005-03-29

2005-03-29

Peng, Kuo-Liang (Department: 1712)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S473500, C428S422800, C428S413000, C525S474000, C525S476000, C528S026000, C524S588000

Reexamination Certificate

active

06872457

ABSTRACT:
An atomic oxygen-resistant film comprising an atomic oxygen-resistant film formed on a polyimide film, wherein the mass reduction rate thereof is no greater than 1.0% when irradiated with atomic oxygen at an irradiation dose of appromixately 3×1020atoms/cm2at a speed of about 8 km/sec.

REFERENCES:
patent: 3908901 (1975-09-01), Newcomb et al.
patent: 5252703 (1993-10-01), Nakajima et al.
patent: 5643986 (1997-07-01), Ishikawa et al.
patent: 4-036321 (1992-02-01), None
patent: 04238798 (1992-08-01), None
patent: 8-253677 (1996-10-01), None
patent: 9-118807 (1997-05-01), None
patent: 9-118808 (1997-05-01), None

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