Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2011-05-24
2011-05-24
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S103000, C117S104000, C117S105000
Reexamination Certificate
active
07947128
ABSTRACT:
In one embodiment the present invention provides for a method for depositing a thin film layer onto a composite tape16, that comprises depositing at least one thin film layer of physically enhancing material30onto at least one portion of the composite tape. The depositing is accomplished by atomic layer epitaxy and the thin film layer is approximately 1-10 molecules thick.
REFERENCES:
patent: 2949150 (1960-08-01), Traynor, Jr.
patent: 3523056 (1970-08-01), Horning
patent: 3592711 (1971-07-01), De Senarclens et al.
patent: 3759866 (1973-09-01), Rogers, Jr. et al.
patent: 6103382 (2000-08-01), Smith et al.
patent: 6117541 (2000-09-01), Frisk
patent: 6200914 (2001-03-01), Schulten
patent: 6559472 (2003-05-01), Sandhu et al.
patent: 6845734 (2005-01-01), Carpenter et al.
patent: 2002/0144838 (2002-10-01), Fritzemeier et al.
patent: 2004/0096587 (2004-05-01), Sambasivan et al.
patent: 2005/0172897 (2005-08-01), Jansen
patent: 2005/0186338 (2005-08-01), Roscheisen et al.
patent: 2007/0114704 (2007-05-01), Stevens et al.
patent: 2008/0193739 (2008-08-01), Dickey et al.
patent: 2009/0000541 (2009-01-01), Conley
Sammelselg et al, “TiO2 thin films by atomic layer deposition: a case of uneven growth at low temperature”, Applied Surface Science 134, pp. 78-86, Mar. 14, 1998.
Jeffrey R. Wank, Steven M. George, Alan W. Weimer; “Nanocoating individual cohesive boron nitride particles in a fluidized bed of ALD”; Power Technology, Apr. 8, 2004; pp. 59-69; vol. 142; XP002495046.
Kunemund Robert M
Siemens Energy Inc.
LandOfFree
Atomic layer epitaxy processed insulation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer epitaxy processed insulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer epitaxy processed insulation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2646992