Atomic layer epitaxy processed insulation

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Details

C117S092000, C117S103000, C117S104000, C117S105000

Reexamination Certificate

active

07947128

ABSTRACT:
In one embodiment the present invention provides for a method for depositing a thin film layer onto a composite tape16, that comprises depositing at least one thin film layer of physically enhancing material30onto at least one portion of the composite tape. The depositing is accomplished by atomic layer epitaxy and the thin film layer is approximately 1-10 molecules thick.

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