Atomic layer epitaxy of compound semiconductor

Details Atomic layer epitaxy of compound semiconductor Atomic layer epitaxy of compound semiconductor

1992-07-08

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437108, 437110, 148DIG48, 148DIG72, 156613, H01L 2120

Patent

active

052702472

ABSTRACT:
A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.

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Aoyagi et al., "Atomic-Layer Growth of GaAs by Modulated-Continuous-Wang Laser MOVPE" J. Vac. Sci. Technol. B5(5) Sep./Oct. 1987 pp. 1460-1464.
Mori et al., "GaAs Growth by Atomic Layer Epitaxy Using Diethylgalliumchloride" Appl. Phys. Lett. vol. 52 No. 1 Jan. 1988 pp. 27-29.
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K. Mochizuki et al., "Carbon Incorporation in GaAs Layer Grown by Atomic Layer Epitaxy," Journal of Crystal Growth, vol. 93 (1988), pp. 557-561.
M. Ozeki et al., "New approach to the atomic layer epitaxy of GaAs using a fast gas stream," Applied Physics Letters, vol. 53, No. 16, Oct. 17, 1988, pp. 1509-1511.

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