Atomic layer epitaxy method and apparatus

Details Atomic layer epitaxy method and apparatus Atomic layer epitaxy method and apparatus

1994-08-17

1996-01-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 91, 117 99, 117102, 117954, C30B 2519

Patent

active

054839190

ABSTRACT:
An atomic layer epitaxy method uses an organometal consisting of a metal and an alkyl group and having a self-limiting mechanism. At least one bond between the metal and the alkyl group of the organometal is dissociated, and organometal molecules consisting of the metal and the alkyl group, and a hydride or organometal molecules consisting of a different metal are alternately supplied on a substrate while at least one bond is left, thereby growing an atomic layer on the substrate. An atomic layer epitaxy apparatus is also disclosed.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4636268 (1987-01-01), Tsang
patent: 4645687 (1987-02-01), Donnelly et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4861417 (1989-08-01), Mochizuki et al.
patent: 4886683 (1989-12-01), Hoke et al.
patent: 5025751 (1991-06-01), Takatani et al.
patent: 5156815 (1992-10-01), Streetman
patent: 5171610 (1992-12-01), Lui
A. Usui et al., "GaAs Atomic Layer Epitaxy by Hydride VPE", Japanese Journal of Applied Physics, vol. 25, No. 3, Mar., 1986, pp. L212-L214.

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