Atomic layer deposition using multilayers

Details Atomic layer deposition using multilayers Atomic layer deposition using multilayers

2008-07-15

2008-07-15

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S088000, C117S091000, C117S099000, C117S103000, C117S108000, C117S944000, C117S950000

Reexamination Certificate

active

07399357

ABSTRACT:
A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber volume, where there is a substrate to be coated. This first reactant then adsorbs, in a self-limiting process, onto the substrate to be coated. After removing this first reactant from the reaction chamber volume, leaving a layer coating the substrate, a second reactant is then admitted into the reaction chamber volume, which adsorbs onto this initial layer in a self-limiting process. The second reactant is then also removed from the reaction chamber volume. Following this procedure a self-limited multilayer of unreacted species remains adsorbed on the substrate to be coated. If additional chemical species are desirable, these exposures and removals could be continued. Next this multilayer is exposed to a flux of radicals. In particular, radicals are chosen that will not damage or have any deleterious effect on the surface underlying the deposited film. When these energetic radicals interact with the surface and release their energy, a chemical reaction between the adsorbed species is induced, and a layer of solid reaction product can be formed. This process is repeated to grow a thin film of any desired thickness.

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