Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-08-01
2009-12-15
Chen, Bret (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S104000, C427S124000, C427S250000, C438S681000
Reexamination Certificate
active
07632351
ABSTRACT:
This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes. The ALD process includes depositing a surface-activating group on the surface; exposing the deposit of the surface-activating complex to a ruthenium precursor to form a deposited ruthenium complex on the surface; and reacting the deposited ruthenium complex with a reducing agent to form a ruthenium-containing film on the surface. This invention is also directed to ruthenium complexes, RuL2L*, that can be used as ruthenium precursors in these processes.
REFERENCES:
patent: 3997337 (1976-12-01), Pittie et al.
patent: 6208003 (2001-03-01), Miura
patent: 6458183 (2002-10-01), Phillips et al.
patent: 6824816 (2004-11-01), Aaltonen et al.
patent: 6875518 (2005-04-01), Shiho et al.
patent: 6939578 (2005-09-01), Bradley et al.
patent: 7220451 (2007-05-01), Aaltonen et al.
patent: 7309658 (2007-12-01), Lazovsky et al.
patent: 2002/0102818 (2002-08-01), Sandhu et al.
patent: 2004/0105934 (2004-06-01), Chang et al.
patent: 2005/0085031 (2005-04-01), Lopatin et al.
patent: 2005/0107283 (2005-05-01), Bradley et al.
patent: 2007/0054487 (2007-03-01), Ma et al.
patent: 2007/0077750 (2007-04-01), Ma et al.
patent: 2007/0293040 (2007-12-01), Emesh et al.
patent: 2008/0274369 (2008-11-01), Lee et al.
patent: WO 2004/035858 (2004-04-01), None
Aaltonen, Titta, et al., “Ruthenium thin films grown by atomic layer deposition.” Chemical Vapor Deposition, vol. 9 No. 1 2003, pp. 45-49. Abstract Only.
Kwon, Oh-Kyum, et al., “Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films.” Electrochemical and Solid-State Letters, 7 (4), C46-C48 (2004).
Dharmaraj, Nallasamy, et al., “Ruthenium(II) carbonyl complexes containing tetradentate Schiff bases”. Transition Met. Chem., 23, pp. 129-132 (1998).
Benabdellah, M., et al., “Ruthenium-ligand complex, an efficient inhibitor of steel corrosion in H3PO4 media”. Materials Letters 61 (2007), pp. 1197-1204.
M. Ritala et. al., Atomic Layer Deposition in Handbook of Thin Film Materials, 2001, vol. 1, Chapter 2, Academic Press.
International Search Report Dated Nov. 8, 2006, International Application No. PCT/US2006/030712, International Filing Date: Aug. 7, 2006.
Chen Bret
E. I. du Pont de Nemours and Company
LandOfFree
Atomic layer deposition processes for the formation of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition processes for the formation of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition processes for the formation of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4103656