Optical: systems and elements – Deflection using a moving element – By moving a reflective element
Reexamination Certificate
2002-12-17
2008-09-16
Cherry, Euncha P (Department: 2872)
Optical: systems and elements
Deflection using a moving element
By moving a reflective element
C359S900000
Reexamination Certificate
active
07426067
ABSTRACT:
A micro-electromechanical device or MEMS having a conformal layer of material deposited by atomic layer deposition is discussed. The layer may provide physical protection to moving components of the device, may insulate electrical components of the device, may present a biocompatible surface interface to a biological system, and may otherwise improve such devices. The layer may also comprise a combination of multiple materials each deposited with great control to allow creating layers of customizable properties and to allow creating layers having multiple independent functions, such as providing physical protection from wear and providing electrical insulation.
REFERENCES:
patent: 4389973 (1983-06-01), Suntola et al.
patent: 5500761 (1996-03-01), Goossen et al.
patent: 5661592 (1997-08-01), Bornstein et al.
patent: 5739945 (1998-04-01), Tayebati
patent: 5746826 (1998-05-01), Hasegawa et al.
patent: 5774252 (1998-06-01), Lin et al.
patent: 6108121 (2000-08-01), Mansell et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6290859 (2001-09-01), Fleming et al.
patent: 6296779 (2001-10-01), Clark et al.
patent: 6297072 (2001-10-01), Tilmans et al.
patent: 6299300 (2001-10-01), Silverbrook
patent: 6300156 (2001-10-01), Decker et al.
patent: 6300619 (2001-10-01), Aksyuk et al.
patent: 6303014 (2001-10-01), Taylor et al.
patent: 6303885 (2001-10-01), Hichwa et al.
patent: 6307169 (2001-10-01), Sun et al.
patent: 6307452 (2001-10-01), Sun
patent: 6324192 (2001-11-01), Tayebati
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6638859 (2003-10-01), Sneh et al.
patent: 6716737 (2004-04-01), Plas et al.
patent: 6766817 (2004-07-01), da Silva
patent: 7015138 (2006-03-01), Pan et al.
patent: 2001/0026859 (2001-10-01), Nakamura
patent: 2003/0064149 (2003-04-01), Miller
patent: 2003/0106490 (2003-06-01), Jallepally et al.
patent: 2004/1178175 (2004-09-01), Pellin
patent: WO 2004/094695 (2004-11-01), None
J.D. Ferguson, A. W. Weimer and S. M. George, “Atomic Layer deposition of ultrathin and conformal AI2O3films and BN Particles”. Thin Solid Films 371 (2000) 95-104.
B.S. Berland, I. P. Garland, A.W. Ott and S.W. George, In Situ Monitoring of Atomic Layer Controlled Pore Reduction in Alumina Tubular Membranes Using Sequential Surface Reactions. Chem. Matter, 1998, 10, pp. 3941-3950.
A.W. Ott, J.W, Klaus, J.M. Johnson and S.M. George, “AI3O3thin film growth on Si (100) using binary reaction sequence chemistry”, Thin Solid Films 292, (1997) pp. 135-144.
M. Ritala, M. K. Leskla, J. Dekkar, C. Mutsaers, P.J. Soininen, J. Sharp, “Growth of titanium dioxide thin films atomic layer epitaxy”, Thin Solid Films, 225 (1993) pp. 288-295.
J.W. Klaus, A.W. Ott, A.C. Dillon and S.M. George, “Atomic Layer controlled growth of Si3N4films using sequential surface reactions”, Surface Science 418 (1998) L14-L19.
M. Ritala, M. Leskela, E. Rauhala and P. Haussalo, “Atomic Layer Epitaxy Growth of TiN Thin Films”, J. Electrochem Soc. vol. 142, No. 8, Aug. 1995. pp. 2731-2737.
Per Martensson and Jan Otto Carlsson, “Atomic Layer Epitaxy of Copper, Growth and Selectivley in the Cu(II)-2,2,6,6-tetramethyl-3, 5-heptanedionate/H2 Process”. J. Electrochem. Soc., vol. 145, No. 8, Aug. 1998, pp. 2926-2931.
J.W. Klaus, S. J. Ferro and S.M. George, “Atomic Layer Deposition of Tungsten Using Sequential Surface Chemistry With a Sacrificial Stripping Reaction”. Thin Solid Films 360 (2000) pp. 145-153.
K. Peterson, P. Tangyunyong and A. Pimentel, “Failure Analysis for Surface-Micromachined Microengines”, SPIE Conference on Materials and Device Characterization in Micromachining. Sep. 1998, SPIE vol. 3512, pp. 190-200.
R. Matero, et al. “Atomic layer deposited thin films for corrosion protection”, J. Phys. IV France 9 (1999). pp. 493-499.
M. Ritala and M. Leskela, “Atomic Layer Epitaxy—A Valuable Tool for Nanotechnology?”, Nanotechnology 10 (1999) pp. 19-24.
Goldsmith, “Special Issues on RF Application of MEMS and Micromachining”, Int'l Journal of RF and Microwave Computer-Aided Engineering, vol. 11, No. 5. pp. 252-253, 2001.
D. J. Nagel and M. E. Zaghloul, MEMS Micro Technology, Mega Impact. Circuits & Devices, Mar. 2001. pp. 14-25.
J. H. Comtois and V.M. Bright, “Surface Micromachined Polysilicon Thermal Actuator Arryas and Applications”, Soilid-State Sensor and Actuator Workshop Hilton Head, South Carolina, Jun. 2-6, 1996. pp. 174-177.
N. Hoivik, et al., “Digitally Controllable Variable High-Q MEMS Capacitor for RF Applications”, IEEE MTT-S 2001 International Microwave Symposium, Pheonix, AZ, May 20-25, 2001. Symposium Digest, pp. 2115-2118.
K. H. Harsh, et al. “Flip-Chip Assembly for SI-Based RF MEMS”. Proceedings of the 12th IEEE IMMS Conference, Florida, Jan. 17, 1999. pp. 1-6.
R.S. Irwin, et al., “Quick Prototyping of Flip Chip Assembly with MEMS”, Proceedings of 44th International Instrumentation Symposium, Reno, Nevada, May 3-7, 1998. pp. 256-261.
S. M. George, A.W. Ott and J.W. Klaus, “Surface Chemistry for Atomic Layer Growth”, J. Phys. Chem. 1996, 100. pp. 13121-131231.
C.R. Stoldt, et al. “Novel Low-Temperature CVD Process for Silicon Carbide MEMS” pp. 984-987.
R. Maboudian, et al., “Self-Assembled Monolayers as Anti-Stiction Coatings for MEMS: Characteristics and Recent Developments”, Sensors and Actuators 82 (2000). pp. 219-223.
R. J. Linderman, et al., “The Resonant Micro Fan For Fluidic Transport, Mixing and Particle Filtering”, Proceedings of 2001 ASME International Mechcanical Engineering Congress and Exposition, Nov. 11-16, 2001, New York, NY. pp. 1-8. IMECE2001/MEMS-23868.
M. Ritala, et al., “Perfectly Conformal TiN and AI2O3Films and Deposited by Atomic Layer Deposition”, Chem. Vapor Deposition, 1999, 5, No. 1. pp. 7-9.
J. J. Yao, “RF MEMS from a Device Perspective”, Journal of Micromechanics and Microengineering-structues, devices and systems, 10 (2000) R9-R38.
S.S. Mani et al., “Effect of W Coating on Microengine Performance”, IEEE 00CH37059, 38th Annual International Reliability Physics Symposium, San Jose, CA, 2000. pp. 146-151.
M.F. Bain et al., “Characterization of CVD Tungsten Deposited by Silane Reduction”. pp. 327-331. 2001.
Tuomo Suntola, “Atomic Layer Epitaxy”, Thin Solid Films, 216 (1992). pp. 84-89.
H. Nathanson, et al., “The Resonant Gate Transistor”. pp. 21-37. Reprinted from IEEE Transactions on Electron Devices, vol. ED-14, No. 3, pp. 117-133, Mar. 1967.
J.W. Klaus et al., “Atomically controlled Growth of Tungsten and Tungsten Nitride using Sequential Surface Reactions”, Applied Surface Science 162-163 (2000). pp. 479-791.
Charles Goldsmith et al., “RF MEMS Variable Capacitors for Tunable Filters”, Raytheon Systems Corporation, Received Jul. 27, 1998; revised Dec. 30, 1998. pp. 362-374.
Zhiping Feng et al., “Design and Modeling of RF MEMS Tunable Capacitors Using Electro-thermal Actuators”, CAMPmode, 1999 IEEE MTT-S Digest. pp. 1507-1510.
M. Adrain Michalicek ,et al., “Micromirror arrays fabricated by flip-chip assembly”. SPIE Conference on Minaturaized Systems with Micro-Optics and MEMS. Santa Clara, CA, Sep. 1999, SPIE vol. 3878. pp. 68-79.
Aleksander Dec, et al., “Micromachined Electro-Mechanically Tunable Capacitors and Their Applications to RF IC's”. © 1998 IEEE Transactions On Microwave Theory and Techniques, vol. 46., No. 12, Dec. 1998. pp. 2587-2596.
Shin-ichi Zaitsu, et al., “Optical thin films consisting of nanoscale laminated layers”, Applied Physics Letters, vol. 80, No. 14, Apr. 8, 2002. pp. 2442-2444.
G. Vdovin et al., “Technology and applications of micromachined adaptive mirrors”, J. Micromech., Microeng. 9 (1999) R8-R19.
Gleb Vdovin et al., “Flexible mirror micromachined
Bright Victor M.
Elam Jeffrey
Fabreguette Francois
George Steven M.
Hoivik Nils
Cherry Euncha P
Cohn PLLC Gary C
Regents of the University of Colorado
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