Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-03-28
2006-03-28
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S095000, C117S102000
Reexamination Certificate
active
07018469
ABSTRACT:
A substrate is positioned within a deposition chamber. Trimethylsilane is flowed to the chamber and a first inert gas is flowed to the chamber under conditions effective to chemisorb a first species monolayer comprising silicon onto the substrate. The first inert gas is flowed at a first rate. After forming the first species monolayer, an oxidant is flowed to the chamber and a second inert gas is flowed to the chamber under conditions effective to react the oxidant with the chemisorbed first species and form a monolayer comprising silicon dioxide on the substrate. The second inert gas flowing is at a second rate which is less than the first rate. The a) trimethylsilane and first inert gas flowing and the b) oxidant and second inert gas flowing are successively repeated effective to form a silicon dioxide comprising layer on the substrate. Other implementations and aspects are contemplated.
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“Digital Chemical Vapor Deposition of SiO2using a Repetitive Reaction of Triethysilane/Hydrogen and Oxidation”; Sakaue et al.; Japanese Journal of Applied Physics, vol. 30, No. 1B; Jan. 1990; pp. L124-L127.
PCT/US2004/029478; Filed Sep. 9, 2004; Search Report.
Li Li
Li Weimin
Sandhu Gurtej S.
Hiteshew Felisa
Micro)n Technology, Inc.
Wells St. John P.S.
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