Atomic layer deposition methods of forming conductive metal...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S255280

Reexamination Certificate

active

07378129

ABSTRACT:
This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.

REFERENCES:
patent: 5554501 (1996-09-01), Coassin et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6528430 (2003-03-01), Kwan et al.
patent: 6576053 (2003-06-01), Kim et al.
patent: 6730163 (2004-05-01), Vaartstra et al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers
patent: 6863725 (2005-03-01), Vaartstra et al.
patent: 7067420 (2006-06-01), Choi et al.
patent: 7098131 (2006-08-01), Kang et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0116087 (2003-06-01), Nguyen et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0176065 (2003-09-01), Vaartstra
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2004/0040494 (2004-03-01), Vaartstra et al.
patent: 2004/0152254 (2004-08-01), Vaartstra et al.
patent: 2005/0020060 (2005-01-01), Aaltonen et al.
patent: 2006/0042752 (2006-03-01), Rueger
patent: 2006/0216419 (2006-09-01), Shero et al.
patent: 2006/0231017 (2006-10-01), Vaartstra
patent: 2006/0260750 (2006-11-01), Rueger
patent: WO 01/27346 (2001-04-01), None
Baker et al., Highly Conformal Thin LFilms of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor, Jun. 20, 2003, Chem. Mater. 2003, 15, 2969-2976.
U.S. Appl. No. 10/133,947, filed Apr. 25, 2002, Vaartstra.
Baghurst et al.,Microwave systheses for superconducting ceramics, 332 Nature 11 (Mar. 24, 1988).
Kuo et al.,Microwave-assisted chemical vapor deposition process for synthesizing carbon nanotubes, J. Vac. Sci. Technol., vol. 19, No. 3, pp. 1030-1033 (May/Jun. 2001).
Juppo et al., “Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films”,Journal of the Electrochemical Society, 147 (9), 2000, p. 3377-3381.
H. Kim, “Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing”,J. Vac. Sci. Technol. B, vol. 21, No. 6, Nov./Dec. 2003, p. 2231-2261.
J. W. Klaus et al., Atomic Layer Deposition of Tungstan Nitride Films Using Sequential Surface Reactions,Journal of the Electrochemical Society, 147 (3), 2000, p. 1175-1181.
J. W. Elam et al., “Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3”, Elsevier Science B.V., Mar. 12, 2003, p. 1-12.
Juppo, “Atomic Layer Deposition of Metal and Transition Metal Nitride Thin Films and In Situ Mass Spectrometry Studies”, Univ. of Helsinki, Dept. of Chemistry, Dec. 14, 2001, p. 1-65.
U.S. Appl. No. 10/196,814, filed Jul. 2002, Kyung-In.
Park et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent”, Electrochemical and Solid-State Letters, 4 (4) C17-C19, The Electrochemical Society, Inc. (2001).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Atomic layer deposition methods of forming conductive metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atomic layer deposition methods of forming conductive metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition methods of forming conductive metal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2776565

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.