Atomic layer deposition methods and chemical vapor...

Details Atomic layer deposition methods and chemical vapor... Atomic layer deposition methods and chemical vapor...

2006-06-13

2009-02-10

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S089000, C117S092000, C117S093000, C117S102000, C117S105000, C117S939000

Reexamination Certificate

active

07488386

ABSTRACT:
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.

REFERENCES:
patent: 5554501 (1996-09-01), Coassin et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6528430 (2003-03-01), Kwan et al.
patent: 6576053 (2003-06-01), Kim et al.
patent: 6730163 (2004-05-01), Vaarstra
patent: 6730164 (2004-05-01), Vaarstra et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers
patent: 6787185 (2004-09-01), Derderian et al.
patent: 6838125 (2005-01-01), Chung et al.
patent: 6863725 (2005-03-01), Vaarstra et al.
patent: 7067420 (2006-06-01), Choi et al.
patent: 7098131 (2006-08-01), Kang et al.
patent: 7393562 (2008-07-01), Derderian et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0164420 (2002-11-01), Derderian et al.
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2003/0017697 (2003-01-01), Choi et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0116087 (2003-06-01), Nguyen et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0176065 (2003-09-01), Vaartstra
patent: 2003/0200917 (2003-10-01), Vaartstra
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2004/0040494 (2004-03-01), Vaartstra et al.
patent: 2004/0152254 (2004-08-01), Vaartstra et al.
patent: 2005/0020060 (2005-01-01), Aaltonen et al.
patent: 2006/0042752 (2006-03-01), Rueger
patent: 2006/0046477 (2006-03-01), Rueger
patent: 2006/0216419 (2006-09-01), Shero et al.
patent: 2006/0231017 (2006-10-01), Vaartstra
patent: 2006/0260750 (2006-11-01), Rueger
patent: WO 01/27346 (2001-04-01), None
Park et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Rent”, Electrochemical and Solid-State Letters, 4 (4) C17-C19, Feb. 2001.
Becker, Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor, Chem. Mater., Jun. 2003, 2969-2976, vol. 15.
Kuo, T. et al., “Microwave-Assisted Chemical Vapor Deposition Process for Synthesizing Carbon Nanotubes”, J. Vac. Sci. Technol. B 19(3), May/Jun. 2001, pp. 1030-1033.
Baghurst, D. et al., “Microwave Syntheses for Superconducting Ceramics”, Nature, vol. 332 (Mar. 24, 1988), p. 311.
Juppo et al., “Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films”; Journal of the Electrochemical society; 147(9) 2000; pp. 3377-3381.
Juppo, “Atomic layer Deposition of Metal and Transition Metal Nitride Thin Films and In Situ Mass Spectrometry Studies”; University of Helsinki; Dec. 2001; 65 pp.
Elam et al., “Surface Chemistry and Film Growth During TiN Atomic Layer Deposition Using TDMAT and NH3”; www.sciencedirect.com; Mar. 12, 2003; 12 pp.
Klaus et al., “Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions”; Journal of the Electrochemical society; 147(3) 2000; pp. 1175-1181.
Kim, H., “Atomic Layer Deposition of Metal and Nitride Thin Films: Current Research Efforts and Applications for Semiconductor Device Processing”; J. Vac. Sci. Technol. B 21(6); Nov./Dec. 2003; pp. 2231-2261.

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