Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2008-05-20
2008-05-20
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S092000, C117S093000, C117S102000, C117S105000, C117S939000
Reexamination Certificate
active
07374617
ABSTRACT:
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.
REFERENCES:
patent: 5554501 (1996-09-01), Coassin et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6528430 (2003-03-01), Kwan et al.
patent: 6576053 (2003-06-01), Kim et al.
patent: 6730163 (2004-05-01), Vaartstra
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6863725 (2005-03-01), Vaartstra et al.
patent: 7067420 (2006-06-01), Choi et al.
patent: 7098131 (2006-08-01), Kang et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2003/0017697 (2003-01-01), Choi et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0089308 (2003-05-01), Raaijmakers
patent: 2003/0116087 (2003-06-01), Nguyen et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0176065 (2003-09-01), Vaartstra
patent: 2003/0194508 (2003-10-01), Carpenter et al.
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2004/0040494 (2004-03-01), Vaartstra et al.
patent: 2004/0152254 (2004-08-01), Vaartstra et al.
patent: 2005/0020060 (2005-01-01), Aaltonen et al.
patent: 2006/0042752 (2006-03-01), Rueger
patent: 2006/0216419 (2006-09-01), Shero et al.
patent: 2006/0231017 (2006-10-01), Vaartstra
patent: 2006/0260750 (2006-11-01), Rueger
patent: WO 01/27346 (2001-04-01), None
Kuo, T. et al., “Microwave-Assisted Chemical Vapor Deposition Process for Synthesizing Carbon Nanotubes”, J. Vac. Sci. Technol. B 19(3), May/Jun. 2001, pp. 1030-1033.
Baghurst, D. et al., “Microwave Syntheses for Superconducting Ceramics”, Nature, vol. 332 (Mar. 24, 1988), p. 311.
“Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films”; Juppo et al.; Journal of the Electrochemical society; 147(9) 2000; pp. 3377-3381.
“Atomic layer Deposition of Metal and Transition Metal Nitride Thin Films and In Situ Mass Spectrometry Studies”; M. Juppo; University of Helsinki; Dec. 2001; 65 pp.
“Surface Chemistry and Film Growth During TiN Atomic Layer Deposition Using TDMAT and NH3”; Elam et al.; www.sciencedirect.com; Mar. 12, 2003; 12 pp.
“Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions”; Klaus et al.; Journal of the Electrochemical society; 147(3) 2000; pp. 1175-1181.
“Atomic Layer Deposition of Metal and Nitride Thin Films: Current Research Efforts and Applications for Semiconductor Device Processing”; H. Kim; J. Vac. Sci. Technol. B 21(6); Nov./Dec. 2003; pp. 2231-2261.
Becker, Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor, Chem. Mater., Jun. 2003, 2969-2976, vol. 15.
Park et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Rent”, Electrochemical and Solid-State Letters, 4 (4) C17-C19, Feb. 2001.
Kunemund Robert
Micro)n Technology, Inc.
Rao G. Nagesh
Wells St. John P.S.
LandOfFree
Atomic layer deposition methods and chemical vapor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition methods and chemical vapor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition methods and chemical vapor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2768172