Atomic layer deposition methods and atomic layer deposition...

Details Atomic layer deposition methods and atomic layer deposition... Atomic layer deposition methods and atomic layer deposition...

2007-10-09

2007-10-09

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S101000, C117S105000, C117S108000, C117S109000, C118S715000, C118S716000

Reexamination Certificate

active

11170809

ABSTRACT:
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

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U.S. Appl. No. 03/30732, filed Sep. 26, 2003, PCT Search Report.
U.S. Appl. No. 03/30732, filed Sep. 26, 2003, PCT IPER.

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