Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-07-18
2006-07-18
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S102000, C117S104000, C117S105000, C117S950000, C257S021000
Reexamination Certificate
active
07077902
ABSTRACT:
An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of Al(NR1R2)x(NR3(CH2)zNR4R5)yor Al(NR1R2)x(NR3(CH2)zOR4)y; where x is 0, 1, or 2; y is 3−x; z is an integer 2 to 8; and R1to R5are independently selected from among hydrocarbyl groups containing 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms. The method includes depositing the second precursor on the first deposited precursor, the second precursor containing a nitrogen source or an oxidant. A deposition product of the first and second precursors includes at least one of an aluminum nitride or an aluminum oxide. The deposition method can be atomic layer deposition where the first and second precursors are chemisorbed or reacted as monolayers. The first precursor can further be non-pyrophoric.
REFERENCES:
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 6287965 (2001-09-01), Kang et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6730163 (2004-05-01), Vaartstra
patent: 2002027063 (2002-04-01), None
Sean T. Barry, et al, “Monomeric Chelated Amides of Aluminum and Gallium: Volatile, Miscible Liquid Precursors for CVD”, Harvard University Chemical Laboratories, Mater. Res. Soc. Symp. Proc., 2000, vol. 606, p. 83.
Kim et al., “Compositional Variations of TiAlN Films Deposited by Metalorganic Atomic Layer Desposition Method”, Jpn. J. Applied Physics, vii, 41, part I (2a) Feb. 2002, pp. 562-565.
Kunemund Robert
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Atomic layer deposition methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3611792