Atomic layer deposition equipment and method

Details Atomic layer deposition equipment and method Atomic layer deposition equipment and method

2006-12-12

2009-06-02

Geyer, Scott B. (Department: 2812)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

Reexamination Certificate

active

07540918

ABSTRACT:
An ALD (Atomic Layer Deposition) apparatus includes a chamber with a sample seated in the reaction space, a supply line providing a raw material gas, an exhaust line through which a reaction gas is exhausted, and a mass analyzer for detecting reaction gases generated within the chamber.

REFERENCES:
patent: 7153362 (2006-12-01), Ko et al.
patent: 2003/0200924 (2003-10-01), Ko et al.

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