Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate
2005-05-17
2005-05-17
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
Multizone chamber
C118S715000, C156S345290, C156S345310
Reexamination Certificate
active
06893506
ABSTRACT:
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a first non-roughing vacuum pump connected to the chamber and through which at least some of the first deposition precursor flows. After forming the first monolayer, a purge gas is fed to the chamber under second vacuum conditions maintained at least in part by a second non-roughing vacuum pump connected to the chamber which is different from the first non-roughing vacuum pump and through which at least some of the purge gas flows. An atomic layer deposition apparatus is disclosed.
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Doan Trung Tri
Sandhu Gurtej S.
Hassanzadeh Parviz
Moore Karla
Wells St. John P.S.
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