Atomic layer deposition

Details Atomic layer deposition Atomic layer deposition

2006-12-26

2006-12-26

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S093000, C117S105000

Reexamination Certificate

active

07153363

ABSTRACT:
Substrates are charged with a material by introducing the substrates into an evacuated vacuum container and exposing the surface of the substrates to a reactive gas which is adsorbed on the surface. The exposure is then terminated and the reactive gas adsorbed on the surface is allowed to react. The surface with the adsorbed reactive gas is exposed to a low-energy plasma discharge with ion energy E10on the surface of the substrate of 0<E10≦20 eV and an electron energy Eeoof 0 eV<Eeo≦100 eV. The adsorbed reactive gas is allowed to react at least with the cooperation of plasma-generated ions and electrons and wherein the density of the resulting material charging on the substrate surface is controlled to have a predetermined density ranging from isolated atoms, to forming a continuous monolayer.

REFERENCES:
patent: 5916365 (1999-06-01), Sherman
patent: 6835414 (2004-12-01), Ramm

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