Atomic layer CVD

Details Atomic layer CVD Atomic layer CVD

2006-04-04

2006-04-04

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

C117S202000, C117S086000, C117S087000, C117S094000, C117S095000

Reexamination Certificate

active

07022184

ABSTRACT:
Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequential pulses of at least two mutually reactive reactants, in such way that the deposition temperature is high enough to prevent condensation of the at least two reactants on the surface but not high enough to result in significant thermal decomposition of each of the at least two reactants individually.

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patent: 6585823 (2003-07-01), Van Wijck
patent: WO 99/28527 (1999-06-01), None

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