Atomic force microscopy measurements of contact resistance...

Details Atomic force microscopy measurements of contact resistance... Atomic force microscopy measurements of contact resistance...

2005-03-29

2005-03-29

Raevis, Robert (Department: 2856)

Measuring and testing

Testing of apparatus

Reexamination Certificate

active

06871559

ABSTRACT:
A modified atomic force microscope (AFM) is used to perform contact resistance and/or current-dependent stiction measurements for conductive thin films at controlled values of applied force. The measurements are preferably performed under conditions approximating the operation of the thin films as electrodes in microswitch array fingerprint sensors. A first, planar thin film is contacted with a second, curved thin film deposited over a round ball having a diameter of a few microns to a few tens of microns. The second film is preferably a coating deposited over the ball and over the arm controlling the ball motion. The coating deposited over the arm provides an electrically conductive path to the contact surface of the ball.

REFERENCES:
patent: 5723981 (1998-03-01), Hellemans et al.
patent: 5763768 (1998-06-01), Henderson et al.
patent: 5992226 (1999-11-01), Green et al.
De Wolf, et al. “Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tops” (J. Vac. Sci. Tech. A 13(3), May/Jun. 1995, pp. 1699-1704.

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