Atom lithographic mask having diffraction grating aligned with p

Details Atom lithographic mask having diffraction grating aligned with p Atom lithographic mask having diffraction grating aligned with p

1997-02-14

1998-07-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, G03F 900

Patent

active

057861161

ABSTRACT:
An ATOM lithographic mask includes a transparent substrate having both a primary mask pattern and a diffraction grating. The diffraction grating includes chromeless phase shifters configured to diffract exposure energy directed through the substrate to provide off axis illumination for the primary mask pattern. The primary mask pattern can include a patterned opaque layer having an alignment mark formed therein. The alignment mark can be used during fabrication of the mask for accurately aligning the grating pattern and the primary mask pattern. Because of the accurate alignment, the layout, orientation and pitch of the diffraction grating with respect to the primary mask pattern, can be selected to optimize image formation from the mask pattern.

REFERENCES:
patent: 4326805 (1982-04-01), Feldman et al.
patent: 5240796 (1993-08-01), Lee et al.
patent: 5587834 (1996-12-01), Noguchi
patent: 5624773 (1997-04-01), Pforr et al.
Kang, Ho-Young et al., A new Method of Tilted Illumination using Grating Mask; ATOM (Advanced Tilted illumination On Mask), SPIE vol. 1927 Optical Laser Microlithography VI, p. 226, Mar. 1993.

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