Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-11-07
2006-11-07
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S061000
Reexamination Certificate
active
07132685
ABSTRACT:
An asymmetry thin-film transistor includes a substrate, a semiconductor layer and a gate positioned on the substrate. The semiconductor layer includes a first lightly doped region and a first heavily doped region adjacent to a first gate side, and a second lightly doped region together with a second heavily doped region adjacent to a second gate side. A first junction is between the first lightly doped region and the first heavily doped region. A second junction is between the second lightly doped region and the second heavily doped region. A distance between the first junction and the first gate side is unequal to a distance between the second junction and the second gate side.
REFERENCES:
patent: 6013930 (2000-01-01), Yamazaki et al.
patent: 6753576 (2004-06-01), Sundaresan
patent: 2002/0028544 (2002-03-01), Fujimoto et al.
patent: 2004/0238820 (2004-12-01), Sakama et al.
AU Optronics Corp.
Hsu Winston
Vu Hung
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