Asymmetrically precharged sense amplifier

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307238, 307279, 307DIG3, 365208, H03K 5153, H03K 3356, G11C 706

Patent

active

042399947

ABSTRACT:
A sense amplifier having a transition point defining the signal level at its input above which it senses one binary condition and below which it senses the other binary condition includes precharge means for offsetting its input very slightly, above or below its transition point to place it in one of its two binary sensing states. The sense amplifier is suited for use with a memory array whose cells are coupled to the input of the sense amplifier via a single gating transistor which conducts in the (source or emitter) follower mode for the one binary condition and in the common (source or emitter) mode for the other binary condition. Following the precharge, the output of the memory cell is coupled to the input of the sense amplifier. For the cell storing the one binary condition for which the gating transistor conducts in the follower mode, the sense amplifier remains in the binary state to which its input was precharged. For the cell storing the other binary condition, the gating transistor conducts in the common mode and causes the sense amplifier to quickly change state.

REFERENCES:
patent: 3828204 (1974-08-01), Farnsworth
patent: 3849673 (1974-11-01), Koo
patent: 3868656 (1975-02-01), Stein et al.
patent: 3882326 (1975-05-01), Kruggel
patent: 4050030 (1977-09-01), Russell
patent: 4096401 (1978-06-01), Hollingsworth
patent: 4107556 (1978-08-01), Stewart et al.
patent: 4114055 (1978-09-01), Hollingsworth
patent: 4150311 (1979-04-01), Matsuda et al.
De Simone et al., "Mosfet Sense Amplifier with Low-Output Impedance"; IBM Tech. Discl. Bull.; vol. 14, No. 8, pp. 2290-2291; 1/1972. _
Chu et al., "Low-Power, High-Speed Sense Latch"; IBM Tech. Discl. Bull.; vol. 17, No. 9, pp. 2582-2583; 2/1975. _
Surgent, "IGFET Sense Amplifier Latch"; IBM Tech. Discl. Bull.; vol. 13, No. 9, pp. 2670-2671; 2/1971. _

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Asymmetrically precharged sense amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Asymmetrically precharged sense amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetrically precharged sense amplifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-609946

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.