Asymmetrical thyristor with highly doped anode base layer region

Details Asymmetrical thyristor with highly doped anode base layer region Asymmetrical thyristor with highly doped anode base layer region

1982-08-25

1985-05-14

Clawson, Jr., Joseph E.

357 13, 357 59, 357 89, 357 90, H01L 2974

Patent

active

045175829

ABSTRACT:
A semiconductor component such as a four layer assymetrical thyristor having four zones of alternately opposite conductivity type, including a P emitter, an N base, a P base and an N emitter, wherein in the N base zone there is provided a stopping layer in a partial region adjacent the P emitter. The stopping layer has a doping concentration which decreases in a direction towards the P emitter zone perpendicular to the four zones. Thus the transport factor for the holes injected by the P emitter is desirably changed by means of lowering the doping concentration of the stopping layer in front of the P emitter, on the side of the anode, of a highly blocking thyristor in the forward direction, while the full effectiveness of the stopping layer remains unchanged. Also a lower blocking current in the blocking condition and/or a lower transmission voltage in the passing condition is attained.

REFERENCES:
patent: 3538401 (1970-11-01), Chu
patent: 3855611 (1974-12-01), Neilson et al.
patent: 3984858 (1976-10-01), Cornu et al.

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