Asymmetrical thyristor and method for producing same

Details Asymmetrical thyristor and method for producing same Asymmetrical thyristor and method for producing same

1986-09-04

1988-10-04

Clawson, Jr., Joseph E.

357 20, 357 89, 357 90, 357 55, H01L 2974

Patent

active

047758830

ABSTRACT:
An asymmetrical thyristor having an n.sup.+ pn.sup.- np.sup.- zone sequence whose functionability is not impaired and, in particular, whose reverse blocking characteristic is not degraded, if it fires after a forward current load and subsequent commutation before its turn-off time has expired due to the positive voltage increasing again. This insensitivity to refiring after commutation when falling below the turn-off time is realized by a flat rise of the doping concentration from the n.sup.- -type zone to the n-type zone, with the doping concentration in the n-type layer increasing approximately exponentially over a path of at least 50.mu.. In order to keep the forward off-state current low with a flat nn.sup.- junction, the thickness and doping of the n.sup.- -type layer are dimensioned such that at the highest intended forward off-state voltage the electric field intensity at the pn.sup.- junction is about 1.5.multidot.10.sup.5 V/cm, drops approximately linearly in the n.sup.- -type layer and, at the nn.sup.- junction, has approximately 1/4 of the value it has at the pn.sup.- junction. Methods for producing such a thyristor are also disclosed.

REFERENCES:
patent: 4223328 (1980-09-01), Terasawa et al.
patent: 4243999 (1981-01-01), Azuma et al.
patent: 4517582 (1985-05-01), Sittig
P. Iseghem, "P-I-N Epitaxial Str. for High Power Devices," IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 823-825.
GEC Journal of Science & Technology, vol. 46, No. 2, 1980, article by B. V. Cordingley et al.
Cordingley and Chamund, "Design and Performance of a Medium-Power Asymmetrical Thyristor", 1980, pp. 67-71, GEC Journal of Sci & Tech, vol. 46, N. 2.

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