Asymmetrical programming ferroelectric memory transistor

Details Asymmetrical programming ferroelectric memory transistor Asymmetrical programming ferroelectric memory transistor

2006-02-07

2006-02-07

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S286000

Reexamination Certificate

active

06995025

ABSTRACT:
A method of fabricating and programming a ferroelectric memory transistor for asymmetrical programming includes fabricating a ferroelectric memory transistor having a metal oxide layer overlaying a gate region; and programming the ferroelectric memory transistor so that a low threshold voltage is about equal to the intrinsic threshold voltage of the ferrorelectric memory transistor.

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patent: 6531324 (2003-03-01), Hsu et al.
patent: 6531325 (2003-03-01), Hsu et al.
U.S. Appl. No. 10/659,547, filed Sep. 9, 2003, Hsu et al.

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