Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-02-07
2006-02-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S286000
Reexamination Certificate
active
06995025
ABSTRACT:
A method of fabricating and programming a ferroelectric memory transistor for asymmetrical programming includes fabricating a ferroelectric memory transistor having a metal oxide layer overlaying a gate region; and programming the ferroelectric memory transistor so that a low threshold voltage is about equal to the intrinsic threshold voltage of the ferrorelectric memory transistor.
REFERENCES:
patent: 5962884 (1999-10-01), Hsu et al.
patent: 6048740 (2000-04-01), Hsu et al.
patent: 6117691 (2000-09-01), Hsu et al.
patent: 6411542 (2002-06-01), Yang et al.
patent: 6420742 (2002-07-01), Ahn et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6531325 (2003-03-01), Hsu et al.
U.S. Appl. No. 10/659,547, filed Sep. 9, 2003, Hsu et al.
Hsu Sheng Teng
Li Tingkai
Nhu David
Sharp Laboratories of America Inc.
Varitz PC Robert D.
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