Electric lamp and discharge devices – Electrode and shield structures – Point source cathodes
Patent
1993-12-01
1995-10-10
Yusko, Donald J.
Electric lamp and discharge devices
Electrode and shield structures
Point source cathodes
313309, 313351, H01J 146
Patent
active
054573556
ABSTRACT:
Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.
REFERENCES:
patent: 5053673 (1991-10-01), Tomii et al.
patent: 5170092 (1992-12-01), Tomii et al.
patent: 5343110 (1994-08-01), Kaneko et al.
G. W. Jones et al., "Fabrication of Silicon Point, Wedge, and Trench FEAs", Technical Digest of IVMC91, Nagahama 1991, pp. 34-35.
J. E. Pogemiller et al., "Gated Chromium Volcano Emitters", IEEE Electron Devices Society Technical Digest, Sixth International Vacuum Microelectronics Conference, Newport, R. I., Jul. 12-15, 1993, pp. 68-69.
Mark H. Weichold et al., "Manufacturable Vacuum Field Emission Diodes", Journal of Vacuum Science Technology, vol. 11, No. 2, Mar./Apr. 1993, pp. 505-510.
Fleming James G.
Smith Bradley K.
Patel N. D.
Sandia Corporation
Tong Peter P.
Yusko Donald J.
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