Asymmetrical alternate metal virtual ground EPROM array

Details Asymmetrical alternate metal virtual ground EPROM array Asymmetrical alternate metal virtual ground EPROM array

1992-10-20

1995-01-03

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365182, 36518901, 365900, 365222, 257314, 257315, G11C 506

Patent

active

053792548

ABSTRACT:
An asymmetrical alternate metal virtual ground (AAMG) EPROM array utilizing an asymmetrical stacked gate cell with an N.sup.- source and four additional select lines is provided. The unintentional write problem associated with the conventional AMG EPROM array is eliminated by utilizing a high select transistor bias voltage and the asymmetrical cell. Soft write of the selected cell is minimized by biasing the source terminal during a read operation. Thus, bit line bias can be significantly increased to enhance the cell current and the memory performance without effecting data retention.

REFERENCES:
patent: 5024835 (1993-04-01), Eitan
patent: 5212541 (1993-05-01), Bergemont

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