Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-04-18
1999-03-09
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257489, 257528, 257532, 257535, 257536, 257533, 257539, 257542, 257546, 257601, H01L 2358, H01L 2900, H01L 2993
Patent
active
058805133
ABSTRACT:
An asymmetric snubber resistor in accordance with the present invention includes a cathode, an N+ region, an N- region, a plurality of P+ regions, and an anode. The N+ region is disposed over the cathode, the N- region is disposed over the N+ region, the plurality of P+ regions are disposed over the N- region, and the anode is disposed over the plurality of P+ regions and exposed portions of the N- region. The asymmetric snubber may also include N regions between the P+ regions. The asymmetric snubber resistor replaces the snubber diode and the snubber resistor in a typical snubber circuit.
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Al-Marayati Sabih
Arthur Stephen D.
Temple Victor A.K.
Yang Eric X.
Harris Corporation
Saadat Mahshid D.
Soward Ida M.
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