Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-08-09
2005-08-09
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S381000
Reexamination Certificate
active
06927074
ABSTRACT:
An asymmetric memory cell and method for forming an asymmetric memory cell are provided. The method comprises: forming a bottom electrode having a first area; forming an electrical pulse various resistance (EPVR) material overlying the bottom electrode; forming a top electrode overlying the EPVR layer having a second area, less than the first area. In some aspects the second area is at least 20% smaller than the first area. The EPVR is a material such as colossal magnetoresistance (CMR), high temperature super conducting (HTSC), or perovskite metal oxide materials. The method further comprises: inducing an electric field between the electrodes; inducing current flow through the EPVR adjacent the top electrode; and, in response to inducing current flow through the EPVR adjacent the top electrode, modifying the resistance of the EPVR. Typically, the resistance is modified within the range of 100 ohms to 10 mega-ohms.
REFERENCES:
patent: 5740100 (1998-04-01), Yoo
patent: 6005800 (1999-12-01), Koch et al.
patent: 6649954 (2003-11-01), Cross
patent: 6759249 (2004-07-01), Zhuang et al.
Article entitled, “Electric-Pulse-Induced Reversible Resistance Change Effect in Magnetoresistive Films”, by S. Q. Liu, N. J. Wu and A. Ignatiev, published in Applied physics Letters, vol. 76, No. 19, May 8, 2000, pp 2749-2751.
Evans David R.
Hsu Sheng Teng
Li Tingkai
Curtin Joseph P.
Hoang Quoc
Nelms David
Ripma David C.
Sharp Laboratories of America Inc.
LandOfFree
Asymmetric memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Asymmetric memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetric memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3519152