Asymmetric gate turn off thyristor with anode short-circuits and

Details Asymmetric gate turn off thyristor with anode short-circuits and Asymmetric gate turn off thyristor with anode short-circuits and

1989-10-13

1992-09-08

Hille, Rolf

357 39, H01L 2974, H01L 29747

Patent

active

051463059

ABSTRACT:
Thyristors conventionally comprise an N type cathode layer divided into oblong domains with two principal axes intersecting at a center and surmounted by a metallization layer, a P type gate layer which has a metalization layer surrounding the cathode domains, an N type base layer comprising a lightly doped first sublayer and a heavily doped second sublayer and a P type anode layer with a metallization layer. Anode short-circuit areas are formed by extremities of the second sublayer extending through the anode layer to the metalization layer. In accordance with the invention the short-circuit areas, rather than being circular and aligned with the centers of the cathode domains, are elongate strips disposed in marginal areas of unit cells defined by the cathode domains, symmetrically relative to the centers of the cells. These areas may be strips parallel to the major axis or concentric annuli which intersect the major axes of the cells disposed in rings towards the ends thereof. The thyristor turn on current can be reduced by a factor of 4 without otherwise affecting performance.

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