Asymmetric field transistors (FETs)

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S570000, C257S471000, C257S449000, C257S408000, C257S409000, C257S368000, C257S344000, C257SE27138

Reexamination Certificate

active

07405458

ABSTRACT:
A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical contact with the semiconductor source block, wherein the source contact region comprises a first electrically conducting material, and wherein the semiconductor source block physically isolates the source contact region from the semiconductor channel region, and (d) a drain contact region in direct physical contact with the semiconductor channel region, wherein the semiconductor channel region is disposed between the semiconductor source block and the drain contact region, and wherein the drain contact region comprises a second electrically conducting material; and (e) a gate stack in direct physical contact with the semiconductor channel region.

REFERENCES:
patent: 4300152 (1981-11-01), Lepselter
patent: 4312113 (1982-01-01), Calviello
patent: 5663584 (1997-09-01), Welch
patent: 5760449 (1998-06-01), Welch
patent: 6413829 (2002-07-01), Yu
patent: 6531743 (2003-03-01), Hirashita et al.
patent: 6750088 (2004-06-01), Hirashita et al.
patent: 2002/0011613 (2002-01-01), Yagishita et al.
patent: 2002/0048841 (2002-04-01), Bryant et al.
patent: 2002/0179980 (2002-12-01), Yagishita et al.
patent: 2003/0094637 (2003-05-01), Awano
patent: 2003/0209739 (2003-11-01), Hisamoto et al.
patent: 2004/0142524 (2004-07-01), Grupp et al.
patent: 60154661 (1985-08-01), None
patent: 2100367 (1990-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Asymmetric field transistors (FETs) does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Asymmetric field transistors (FETs), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetric field transistors (FETs) will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2796468

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.