Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Reexamination Certificate
2008-07-29
2008-07-29
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
C438S570000, C257S471000, C257S449000, C257S408000, C257S409000, C257S368000, C257S344000, C257SE27138
Reexamination Certificate
active
07405458
ABSTRACT:
A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical contact with the semiconductor source block, wherein the source contact region comprises a first electrically conducting material, and wherein the semiconductor source block physically isolates the source contact region from the semiconductor channel region, and (d) a drain contact region in direct physical contact with the semiconductor channel region, wherein the semiconductor channel region is disposed between the semiconductor source block and the drain contact region, and wherein the drain contact region comprises a second electrically conducting material; and (e) a gate stack in direct physical contact with the semiconductor channel region.
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Gebremariam Samuel A.
Gurley Lynne A.
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
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