Asymmetric chip design for LEDS

Details Asymmetric chip design for LEDS Asymmetric chip design for LEDS

1984-11-21

1987-10-13

Davie, James W.

357 16, 357 55, 357 65, 357 68, H01L 3300

Patent

active

047002107

ABSTRACT:
The area of a surface-emitting LED is reduced, and hence the number of LEDs which can be obtained from a single wafer is increased, by a chip design in which the light-emitting spot is positioned asymmetrically toward one corner of the chip. Preferably, an L-shaped contact is formed on the light output surface so that light-emitting spot emerges from between the legs of the L.

REFERENCES:
patent: 4415414 (1983-11-01), Burton et al.
Wada et al., "Performance and Reliability of High Radiance InGaAsP/InP DH LED's Operating in the 1.15-1.5 .mu.m Wavelength Region", IEEE Journal of Quantum Electronics, vol. QE-18, No. 3, Mar. 1982, pp. 368-374.
Heinen et al., "High Radiance Surface-Emitting (In,Ga)(As,P)/InP IREDs with an Emission Wavelength of 1.3 .mu.m for Transmission Rates of 34 Mbit/s and 140 Mbit/s".
I. Camlibel et al., patent application Ser. No. 521,443, filed Aug. 8, 1983.

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