Asymmetric bidirectional silicon-controlled rectifier

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...

Reexamination Certificate

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Reexamination Certificate

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08049247

ABSTRACT:
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitaxial layer and separated by a portion of the undoped epitaxial layer; a first buried layer formed in a junction between the first well and the substrate; a second buried layer formed in a junction between the second well and the substrate; a first and a second semiconductor area with opposite conduction type both formed inside the first well; a third and a fourth semiconductor area with opposite conduction type both formed inside the second well, wherein the first and second semiconductor areas are connected to the anode of the silicon-controlled rectifier, and the third and fourth semiconductor areas are connected to the cathode of the silicon-controlled rectifier.

REFERENCES:
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patent: 6258634 (2001-07-01), Wang et al.
patent: 6365924 (2002-04-01), Wang et al.
patent: 6960792 (2005-11-01), Nguyen
patent: 7034363 (2006-04-01), Chen
patent: 7145187 (2006-12-01), Vashchenko et al.
patent: 2005/0045957 (2005-03-01), Kao
patent: 2008/0116480 (2008-05-01), Glenn et al.

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