Assymetric quantum well infrared detector

Details Assymetric quantum well infrared detector Assymetric quantum well infrared detector

1993-07-22

1994-10-11

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 21, 257185, H01L 310352

Patent

active

053550005

ABSTRACT:
An electromagnetic wave detector has several stacks of layers of semiconducting materials. Each stack constitutes an asymmetrical quantum well with stepped barrier and has two energy levels, one of which is located beneath the energy level of the intermediate barrier step while the other is located above it. Means are used to apply an electric field to the structure.

REFERENCES:
patent: 4745452 (1988-05-01), Sollner
Applied Physics Letters, vol. 50, No. 25, Jun. 22, 1987, pp. 1814-1816, K. K. Choi, et al., "Multiple Quantum Well 10 .sub.n M GaAs/Al.sub.x Ga.sub.1-x As Infrared Detector with Improved Responsivity".
"New Mode of IR Detection Using Quantum Wells", vol. 45, No. 6, Sep. 15, 1984, pp. 649-651; D. D. Coon et al.
"Photovoltaic Quantum Well Infrared Detector", vol. 52, No. 20, May 16, 1988, pp. 1701-1703; K. W. Goosen et al.

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