Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1989-07-17
1990-10-23
Fears, Terrell W.
Static information storage and retrieval
Associative memories
Ferroelectric cell
36518905, 36523008, G11C 1500
Patent
active
049657674
ABSTRACT:
A memory cell circuit of an associative memory composed of only four NMOS transistors is disclosed. Each memory cells of the circuit is connected two bit lines, a word line, a match setup line for commanding coincidence detection, and a match line for transferring the results of detection. The data signals are stored in the gate capacity of each of the transistors 3. This simplified memory cell circuit contributes to higher integration of the associative memory.
REFERENCES:
patent: 3733589 (1973-05-01), Thompson
Hiroshi Kodata et al, "An 8 Kb Content-Addressable and Reentrant Memory", Digest of Technical Papers, IEEE International Solid State Circuit Conference, 1985, pp. 42-43.
Ogura et al., "20 kB CAM LSI", Electronics Information Communication Society, 1987 Technical Report CPSY 87-33.
Hamamoto Takeshi
Kinoshita Mitsuya
Kobayashi Toshifumi
Mihara Masaaki
Fears Terrell W.
Mitsubishi Denki & Kabushiki Kaisha
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