Associative memory device equipped with associative memory cells

Static information storage and retrieval – Associative memories – Ferroelectric cell

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365185, 36523006, G11C 1500

Patent

active

053716973

ABSTRACT:
An associative memory device has associative memory cells arranged in matrix and each implemented by a parallel combination of two electrically erasable and programmable non-volatile memory transistors, and a multi-bit data code stored in a row of associative memory cells allows the two electrically erasable and programmable non-volatile memory transistors of each associative memory cell to selectively enter the programmed state so that a multi-bit key code is checked to see whether or not drain current flows through the electrically erasable and programmable non-volatile memory transistors into a source line.

REFERENCES:
patent: 4538243 (1985-08-01), Zehner
patent: 5051948 (1991-09-01), Watabe et al.
patent: 5077691 (1991-12-01), Haddad et al.
H. Kadota et al., "An 8-kbit Content-Addressable and Reentrant Memory", IEEE Journal of Solid-State Circuits, vol. SC-20, No. 5, Oct. 1985, pp. 951-957.

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