Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1998-09-29
2000-12-12
Yoo, Do Hyun
Static information storage and retrieval
Associative memories
Ferroelectric cell
36518529, 365218, G11C 700
Patent
active
061607290
ABSTRACT:
An associative memory contains cells that are formed of a series circuit of an ordinary PMOS transistor with a PMOS transistor with a floating gate. The ordinary PMOS transistor receives of an input vector and the gate of the second PMOS transistor is connected to a learning input. For the associative access, a second vector can be applied to the drain terminal of the second PMOS transistor and, upon readout, the current flow through the respective series circuit is evaluated column-by-column by current evaluator circuits.
REFERENCES:
patent: 5014235 (1991-05-01), Morton
Kramer--Array-Based Analog Computation: Principles, Advantages and Limitations--Neural Network Design Group--CR&D--1086-1947/96 1EEE Proceedings of MicroNeuro'96--p. 68-79.
Biological Cybernetics by Springer-Verlag 1980--G. Palm--p. 19-31.
Booken, heir by Inge
Jung Stefan
Luck, deceased Andreas
Luck, heir by Manfred
Thewes Roland
Siemens Aktiengesellschaft
Yoo Do Hyun
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