Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1997-07-10
1999-06-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257154, 257177, H01L 2974, H01L 31111
Patent
active
059145021
ABSTRACT:
A monolithic assembly of thyristors having a common cathode and a single gate includes a lightly-doped substrate, several anode regions, on the front surface side, a cathode gate layer on the rear surface side of the substrate, a cathode layer on the rear surface side of the layer coated with a cathode metallization, a well extending from the front surface to the layer, a gate metallization formed on the upper surface of the well, and means for increasing the leakage resistance between the cathode layer and the cathode gate layer.
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patent: 3644800 (1972-02-01), Igarashi
patent: 4032958 (1977-06-01), Yagi et al.
patent: 5365086 (1994-11-01), Pezzani
Patent Abstracts of Japan, vol. 8, No. 13 (E-222), Jan. 20, 1984 & JP-A-58 176972 (Nippon Denki).
Patent Abstracts of Japan, vol. 4, No. 4 (E-164), Jan. 12, 1980 & JP-A-54 144887 (Mitsubishi Denki).
Patent Abstracts of Japan, vol. 7, No. 33 (E-157), Feb. 9, 1983 & JP-A-57 186365 (Nippon Denki).
Patent Abstracts of Japan, vol. 1, No. 152 (E-71), Dec. 7, 1977 & JP-A-52 091659 (Toshiba Corp.).
Patent Abstracts of Japan, vol. 10, No. 201 (E-419), Jul. 15, 1986 & JP-A-61 044464 (Toshiba Corp.).
Ngo Ngan V.
SGS-Thomson Microelectronics S.A.
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