Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1996-08-02
1999-11-16
Whitehead, Jr, Carl
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257701, 257778, 257779, H01L 23053
Patent
active
059863382
ABSTRACT:
A semiconductor wafer having one or more pad electrodes is joined to a reinforcing insulator plate formed with a plurality of through holes. On both sides of the reinforcing plate, there are formed conductive layers which are electrically connected through the through holes filled with a first solder. Each conductive layer has electrically separated sections. The wafer and reinforcing plate are joined together by bonding the pad electrodes to the sections of the conductive layer confronting the wafer. The thus-formed assembly of the wafer and plate enables backside grinding of the wafer to a desired thickness to reduce the on resistance of a semiconductor device. The assembly is then divided into chips, and each chip is mounted on a support member such as a lead frame. The backside electrode layer formed on the backside of the chip is bonded to one conductor of the lead frame, and the sections of the topside conductive layer on the reinforcing plate are connected to other conductors of the lead frame by using solders, for example.
REFERENCES:
patent: 4672415 (1987-06-01), Berndes et al.
patent: 5808872 (1998-09-01), Ozawa
Nissan Motor Co,. Ltd.
Potter Roy
Whitehead, Jr Carl
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