Assembly in a single case of a main power-switching semiconducto

Details Assembly in a single case of a main power-switching semiconducto Assembly in a single case of a main power-switching semiconducto

1980-12-01

1984-05-01

Wojciechowicz, Edward J.

357 13, 357 38, 357 46, 357 51, 357 55, 357 74, 357 76, 357 79, H01L 2316

Patent

active

044464789

ABSTRACT:
In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus, transversally to the center of the diode a N.sup.+ NN.sup.+ structure appears while, transversally to the periphery an N.sup.+ NP structure exists.

REFERENCES:
patent: 3729659 (1973-04-01), Bennett et al.
patent: 3975758 (1976-08-01), Schlegel
patent: 4225874 (1980-09-01), Martinelli
patent: 4231054 (1980-10-01), Ruetsch et al.

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