Assembly for the manufacture of highly integrated circuits on a

Details Assembly for the manufacture of highly integrated circuits on a Assembly for the manufacture of highly integrated circuits on a

1999-12-22

2000-11-28

Mills, Gregory

Coating apparatus

Gas or vapor deposition

With treating means

118728, 156345, C23C 1600

Patent

active

06152073&

ABSTRACT:
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.

REFERENCES:
patent: 4350562 (1982-09-01), Bonu
Patent Abstracts of Japan No. 3-228321 (Kano), dated Oct. 9, 1991.
Patent Abstracts of Japan No. 5-3176 (Kano), dated Jan. 8, 1993.
Patent Abstracts of Japan No. 4-302422 (Kano), dated Oct. 26, 1992.
Patent Abstracts of Japan No. 3-272140 (Otake), dated Dec. 3, 1991.
Patent Abstracts of Japan No. 5-326453 (Ono), dated Dec. 10, 1993.
Patent Abstracts of Japan No. 63-202922 (Yanabe), dated Aug. 22, 1988.
Patent Abstracts of Japan No. 63-94630 (Tsuji), dated Apr. 25, 1988.
Patent Abstracts of Japan No. 03-228321 (Tsuneo), dated Oct. 9, 1991.
Patent Abstracts of Japan No. 05-315300 (Yasuyuki), dated Nov. 26, 1993.
"Backside Etch of Silicon Nitride on Device Wafers", Research Disclosure Publication, Feb. 1986, No. 26238, p. 98.
"Etching of thin Sio.sub.2 layers using wet HF gas" (Van der Heide et al.), 8257 Journal of Vacuum Science & Technology, vol. 7, No. 3, Part II, Jun. 1989, pp. 1718-23.

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