Aspherical microstructure, and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S434000, C257S618000, C264S002500

Reexamination Certificate

active

06876051

ABSTRACT:
As a method of fabricating aspherical microstructures, a protruding microstructure is formed on a substrate, an aspherical-profile forming layer is formed on the substrate and the protruding microstructure, and the aspherical-profile forming layer is hardened. An aspherical profile is formed on the protruding microstructure due to a surface tension of the aspherical-profile forming layer in the step of forming the aspherical-profile forming layer, and the aspherical profile is maintained through the step of hardening the aspherical-profile forming layer.

REFERENCES:
patent: 5040961 (1991-08-01), Hamblen et al.
patent: 5056912 (1991-10-01), Hamada et al.
patent: 5143659 (1992-09-01), Hamblen et al.
patent: 5504302 (1996-04-01), Hentze et al.
patent: 5853960 (1998-12-01), Tran et al.
patent: 6069350 (2000-05-01), Ohtsuka et al.
patent: 6663784 (2003-12-01), Kummer et al.
patent: 20020027300 (2002-03-01), Hartmann et al.
patent: 5-150103 (1993-06-01), None
patent: 6-154934 (1994-06-01), None
patent: 7-104106 (1995-04-01), None
patent: WO 0044667 (2000-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Aspherical microstructure, and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aspherical microstructure, and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aspherical microstructure, and method of fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3392979

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.