Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-04-05
2005-04-05
Everhart, Caridad (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S618000, C264S002500
Reexamination Certificate
active
06876051
ABSTRACT:
As a method of fabricating aspherical microstructures, a protruding microstructure is formed on a substrate, an aspherical-profile forming layer is formed on the substrate and the protruding microstructure, and the aspherical-profile forming layer is hardened. An aspherical profile is formed on the protruding microstructure due to a surface tension of the aspherical-profile forming layer in the step of forming the aspherical-profile forming layer, and the aspherical profile is maintained through the step of hardening the aspherical-profile forming layer.
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Ushijima Takashi
Yagi Takayuki
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