Ashing method

Details Ashing method Ashing method

1996-04-29

1998-06-09

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438726, 216 69, H01L 21306

Patent

active

057633282

ABSTRACT:
In an ashing method for ashing a wafer having an aluminum wiring layer etched by a chlorine containing gas, the wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH.sub.3 OH, C.sub.2 H.sub.5 OH, n--C.sub.3 H.sub.7 OH, and i--C.sub.3 H.sub.7 OH is used as an ashing gas, a flow ratio between the alcohol gas and the oxygen gas is set in the range of 1:1 to 1:5, pressure in an ashing chamber is set to 200 Pa or more, and temperature in the ashing chamber is set in the range of 200.degree. C. to 270.degree. C. Accordingly, corrosion in the aluminum wiring layer due to a residual component of the chloride containing gas in a photoresist film can be prevented.

REFERENCES:
patent: 5174816 (1992-12-01), Aoyama et al.
patent: 5227341 (1993-07-01), Kamide et al.
patent: 5320707 (1994-06-01), Kanekiyo et al.
patent: 5578163 (1996-11-01), Yachi

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