Ascending differential silicon harvesting means and method

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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118716, 423350, 427 86, 427212, 427215, C23C 1100

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044169132

ABSTRACT:
An improved means and method for extracting polycrystalline silicon from silicon source gases is provided wherein seed particles and source gases are reacted in a rising particle reaction chamber in which the gas velocity is sufficient to entrain and eject all seed particles smaller than a predetermined size while those which have grown to a larger size fall through the rising gas stream and are extracted from the base of the reactor. Those seed particles which are ejected from the reaction column are separated from the spent gases and fall back into a concentric reservoir. A first gas not containing any silicon is supplied to a nozzle within the reservoir and creates a first gas-particle mixture which is injected into an auxiliary mixing chamber, where it is further mixed with a high velocity lifting gas which includes the source gases. The lifting and source gas-particle mixture is swept through the reactor where silicon deposits on the seed particles. The seed particles recirculate from reaction column to reservoir to reaction column until they have achieved sufficient size so as to be automatically harvested by the differential lifting action in the reaction column.

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