Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-11-03
1991-04-02
Morgenstern, Norman
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505732, 505730, 427 62, 427 63, 427 39, 427 38, 4271263, 4272553, 427314, 118726, 118 50, B05D 512, B05D 306, C23C 1408
Patent
active
050047213
ABSTRACT:
The present invention relates to an electron beam coevaporation method of preparing an oxide superconducting film on a silicon or an aluminum oxide substrate at a temperature below 600.degree. C. without the need for post-annealing, which comprises evaporating metallic superconductor precursor components onto a heated substrate from individual evaporation sources while directing oxygen plasma over the substrate surface wherein the evaporation sources and the substrate are located in two different vacuum chambers, a differential pressure is maintained between the two vacuum chambers during deposition so that the lowest pressure is at the evaporation sources, an intermediate pressure in the vacuum chamber surrounding the substrate and the highest pressure at the substrate surface.
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Work relating to development of the present invention was supported by AFOSR (87-0228) and NSF (DMR-855305).
Board of Regents , The University of Texas System
King Roy V.
Morgenstern Norman
Motorola Inc.
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