Aryl dicarboxylic acid diimidazole-based compounds as n-type...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51001, C257SE51051

Reexamination Certificate

active

07745821

ABSTRACT:
A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

REFERENCES:
patent: 6387727 (2002-05-01), Katz et al.
patent: 2002/0164835 (2002-11-01), Dimitrakopoulos et al.
patent: 2005/0039274 (2005-02-01), Yang et al.
patent: 2006/0281924 (2006-12-01), Yang et al.
patent: 2009/0166614 (2009-07-01), Konemann et al.
patent: 05249718 (1993-09-01), None
patent: 05308145 (1993-11-01), None
Machine Translation of JP 05-308145.
Machine Translation of JP 05-249718.

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