Artificial lattice film and magneto-resistance effect element us

Details Artificial lattice film and magneto-resistance effect element us Artificial lattice film and magneto-resistance effect element us

1994-12-15

1996-10-22

Walberg, Teresa J.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

360113, H01L 4300

Patent

active

055681158

ABSTRACT:
An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1.about.50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.

REFERENCES:
patent: 3480522 (1969-11-01), Brownlow
patent: 4663607 (1987-05-01), Kitada et al.
R. Hart, et al., "Magnetoresistance in Ni-Co-Cu/Cu Multilayers Electrodeposited onto (100) n-type Gallium Arsenide Substrates", Extended Abstracts, vol. 92, No. 2, pp. 406-407, Oct. 10, 1993, New Orleans.
Encyclopaedic Dictionary of Physics, Thewlis, 1961, pp. 476-477.
Hart et al., "Magnetoresistance in Ni-Co-Cu/Cu Multilayers Electrodeposited . . . Onto Substrates". Extended Abstracts, vol.92, pp. 406-407, Oct. 1993 .

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