Artificial ionic synapse

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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257314, 257405, H01L 2978

Patent

active

051722046

ABSTRACT:
An artificial neural synapse (10) is constructed to function as a modifiable excitatory synapse. In accordance with an embodiment of the invention the synapse is fabricated as a silicon MOSFET that is modified to have ions within a gate oxide. The ions, such as lithium, sodium, potassium or fluoride ions, are selected for their ability to drift within the gate oxide under the influence of an applied electric field. In response to a positive voltage applied to a gate terminal of the device, positively charged ions, such as sodium or potassium ions, drift to a silicon/silicon dioxide interface, causing an increase in current flow through the device. The invention also pertains to assemblages of such devices that are interconnected to form an artificial neuron and to assemblages of such artificial neurons that form an artificial neural network.

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