Artificial band gap

Details Artificial band gap Artificial band gap

2011-05-03

2011-05-03

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C977S755000, C977S781000

Reexamination Certificate

active

07935954

ABSTRACT:
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.

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