Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-08-25
1998-11-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257 22, 257194, H01L 2915
Patent
active
058347925
ABSTRACT:
The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of .delta.-doped second semiconductor material in first semiconductor material, with the second material chosen to have a bandgap energy that differs from that of the first material. Exemplarily, in a Be-doped GaAs/AlGaAs structure according to the invention the effective activation energy of the dopant was measured to be about 4 meV, and in conventionally Be-doped GaAs it was measured to be about 19 meV. The invention can be advantageously used to dope III-V and II-VI semiconductors. In some cases it may make possible effective doping of a semiconductor for which prior art techniques are not satisfactory.
REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4792832 (1988-12-01), Baba et al.
S. M. Sze, "Physics of Semiconductor Devices", second edition, A Wiley-Interscience Publication, p. 21.
"Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices", by R. Dingle et al, Applied Physics Letters 33(7), Oct. 1, 1978, pp. 665-667.
Cunningham John Edward
Tsang Won-Tien
Jackson Jerome
Lucent Technologies - Inc.
Pacher Eugen E.
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